Transistors - Page 2


Save on Transistors at Days of Revelation, Page 2. Top brands include Analog Devices, Square D, infineon, nte-electronics-inc, microchip-technology-inc, on-semiconductor, & NTE-ELECTRONICS-INC. Hurry! Limited time offers. Offers valid only while supplies last.



Power Management IC Development Tools Energy HARVESTING (EH) Multi-Source Demo (DC2042A)
By Analog Devices
In Stock
$560.80
4.4 out of 5 stars with 57 reviews
Features: Tool Is For Evaluation Of: : LTC3588-1 Input Voltage: : 20 mV to 400 mV Output Voltage: : 1.8 V Series: : LTC3588 Brand: : Analog Devices Product Type: : Power Management IC Development Tools Factory Pack Quantity:: 1 Subcategory: : Development ToolsManufacturer: : Analog Devices Inc.. Product Category: : Power Management IC Development Tools. Product: : Demonstration Boards. Type: : Energy Harvesting.


1- Square D H362Nrb 60A 600V 4Sn Sw
By Square D
In Stock
$536.22

mpn: H362NRB, ean: 0785901122494,

4.3 out of 5 stars with 58 reviews
1- Square D H362Nrb 60A 600V 4SN Switch1- Square D H362Nrb 60A 600V 4SN Switch.


MOSFET; Power; P-Ch; VDSS -100V; RDS(ON) 0.117Ohm; ID -23A; TO-247AC; PD 140W; VGS +/-2, Pack of 20
By infineon
In Stock
$148.24
4.8 out of 5 stars with 49 reviews
Overview P-Channel Power MOSFET over 8A, InfineonInfineons range of diskrete HEXFET power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.Features:Dimensions-15.87 x 5.31 x 20.70 mm Gate Charge, Total-97 nC Height-0.815'' (20.7mm) Length-0.625'' (15.875mm)


Transistor PNP Silicon Darlington 120V IC 50A to-3 CASE COMPLEMENT to NTE2349, Pack of 2
By nte-electronics-inc
In Stock
$125.46
4.0 out of 5 stars with 33 reviews
Overview Silicon Complementary Darlington Transistor, 50 A Collector CurrentDesigned for use as output devices in general purpose amplifier applications.Features:Dimensions-22.2 Dia. x 8.89 H mm Gain, DC Current, Maximum-18000 Gain, DC Current, Minimum-400 Height-0.35'' (8.89mm) Input Voltage-5 V Material-Si Mounting Type-Through Hole Number of Elements per Chip-1 Number of Pins-3 Package Type-TO-3Configuration-Common Base. Current, Collector-50 A. Current, Output-50 A. Current, Output,


MOSFET; Power; P-Ch; VDSS -55V; RDS(ON) 0.06Ohm; ID -31A; D2Pak; PD 110W; VGS +/-20V, Pack of 20
By infineon
In Stock
$152.98
4.3 out of 5 stars with 35 reviews
Overview HEXFET P-Channel Power MOSFETs, InfineonHEXFET Power MOSFETs present a variety of rugged single P-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.Features:Dimensions-10.67 x 9.65 x 4.83 mm Gate Charge, Total-63 nC Height-0.19'' (4.83mm) Length-0.42'' (10.67mm) Mounting Type-Surface Mount Number of Elements per Chip-1 Number of Pins-3 Package Type-D2PAK Polarization-P-Channel Power Dissipation-110 W


Microchip TC4428ACOA; Dual MOSFET PowerDriver; 1.5A; 4.5 to 18 V; 8-Pin SOIC, Pack of 20
By microchip-technology-inc
In Stock
$78.48
4.9 out of 5 stars with 8 reviews
Overview Microchips new Power MOSFET Drivers feature wide-range input supply voltages and output currents. These drivers offer outstanding latch-up immunity. The portfolio has recently been expanded with the addition of smaller, surface mount packages.Features:Fall Time-Maximum of 40 ns Height-0.059'' (1.5mm) Input Logic Compatibility-CMOS, TTL Length-0.192'' (4.9mm) Mounting Type-Surface Mount Number of Outputs-2 Number of Pins-8 Operating Voltage Range-4.5 to 18 V Package Type-SOIC


Transistor PNP Germanium 25V IC-0.2A TO-18 RF-IF AMP HIGH Speed Switch, Pack of 5
By nte-electronics-inc
In Stock
$159.28
4.6 out of 5 stars with 32 reviews
Overview Germanium Mesa Transistor, PNP, for High-Speed Switching Applications, TO18 Package TypeFeatures:Frequency, Operating-300 MHz Height-0.21'' (5.33mm) Material-Si Mounting Type-Through Hole Number of Elements per Chip-1 Number of Pins-3 Package Type-TO-718 Polarity-PNP Power Dissipation-300 W Primary Type-GeAmplifier Type-RF-IF. Configuration-Common Base. Current, Collector-0.2 A. Diameter-5.84 mm. Dimensions-5.84 Dia. x 5.33 H mm.


Transistors; Darlington; 8A 60V Bipolar Power NPN, Pack of 100
By on-semiconductor
In Stock
$253.20
4.7 out of 5 stars with 50 reviews
Transistors; Darlington; 8A 60V Bipolar Power NPN Features:Dimensions-10.28 x 4.82 x 15.75 mm Height-0.62'' (15.75mm) Input Voltage-2.8 V Length-0.404'' (10.28mm) Mounting Type-Through Hole Number of Elements per Chip-2 Number of Pins-3 Package Type-TO-220AB Polarity-NPN Power Dissipation-75 WConfiguration-Dual. Current, Base-120 mA. Current, Collector Cutoff-20 (Base), 20:200 (Emitter) A. Current, Continuous Collector-8 A. Current, Output-8 A.


MOSFET; Power; N-Ch; VDSS 100V; RDS(ON) 15 Milliohms; ID 56A; D-Pak (TO-252AA); -55deg, Pack of 20
By infineon
In Stock
$93.20
4.9 out of 5 stars with 16 reviews
MOSFET; Power; N-Ch; VDSS 100V; RDS(ON) 15 Milliohms; ID 56A; D-Pak (TO-252AA); -55deg Features:Dimensions-6.22 x 6.22 x 2.26 mm Gate Charge, Total-69 nC Height-0.089'' (2.26mm) Length-0.244'' (6.22mm) Mounting Type-Surface Mount Number of Elements per Chip-1 Number of Pins-3 Package Type-DPAK Polarization-N-Channel Power Dissipation-140 WCapacitance, Input-2930 pF. 25 V. Channel Type-N. Configuration-Single. Current, Drain-56 A.


Optoisolator; NPN Transistor; 1.15 V (Typ.) & 64; 10 mA; 60 mA; 250 mW & 64; 25, Pack of 20
By nte-electronics-inc
In Stock
$115.60
4.9 out of 5 stars with 24 reviews
Overview Optoisolator, NPN Transistor Output, Forward Current 60 mAUsed in regulation feedback circuits, monitor and detection circuits, and solid state relays Guaranteed switching speedsThe NTE3041 is an optoisolator in a 6-Lead DIP type package consisting of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.Features:Output Type-Transistor Package Type-6-Pin DIP Power Dissipation-250 mW 25 ?C Series- Opto-Transistor Series


Transistor NPN Silicon Darlington 100V IC 10A TO-220 CASE COMP'L to NTE264, Pack of 20
By nte-electronics-inc
In Stock
$186.00
4.7 out of 5 stars with 42 reviews
Overview Silicon Complementary TransistorsFeatures:Dimensions-10.67 L x 15.49 H mm Gain, DC Current, Minimum-100 Height-0.61'' (15.49mm) Input Voltage-5 V Length-0.42'' (10.67mm) Material-Si Mounting Type-Through Hole Number of Elements per Chip-2 Number of Pins-3 Package Type-TO-220Configuration-Common Base. Current, Collector-10 A. Current, Continuous Collector-10 A. Current, Output-10 A. Device Dissipation-65 W.


Transistor; Bipolar; Si; NPN; Driver; High Voltage; Switch; VCEO 400V; IC 15A; PD 175W - Pack of 2
By NTE-ELECTRONICS-INC
In Stock
$82.90
4.2 out of 5 stars with 56 reviews
Frequency, Operating : 28 MHz Gain, DC Current, Maximum : 30 Gain, DC Current, Minimum : 6 Height : 0.35'' (8.89mm) Material : Si Material Type : Silicon Mounting Type : Through Hole Number of Elements per Chip : 1 Number of Pins : 2 age Type : TO-3Configuration : Common Base. Current, Collector : 15 A. Device Dissipation : 175 W. Diameter : 22.2 mm. Dimensions : 22.2 Dia. x 8.89 H mm.


Trans NPN DARL 120V 30A TO3, Pack of 5
By on-semiconductor
In Stock
$129.52
4.4 out of 5 stars with 19 reviews
TRANS NPN DARL 120V 30A TO3 Features:Dimensions-39.37 x 8.51 x 26.67 mm Height-1.05'' (26.67mm) Input Voltage-5 V Length-1.55'' (39.37mm) Mounting Type-Through Hole Number of Elements per Chip-2 Number of Pins-2 Package Type-TO-3 Polarity-NPN Power Dissipation-200 WConfiguration-Dual. Current, Base-1 A. Current, Continuous Collector-30 A. Current, Output-30 A. Current, Output, Leakage-1 mA.


IC MOSFET DVR 3A Dual HS 8-DIP, Pack of 20
By microchip-technology-inc
In Stock
$86.16
4.3 out of 5 stars with 44 reviews
Overview Microchips new Power MOSFET Drivers feature wide-range input supply voltages and output currents. These drivers offer outstanding latch-up immunity. The portfolio has recently been expanded with the addition of smaller, surface mount packages.Features:Fall Time-Maximum of 60 ns Height-0.145'' (3.68mm) Input Logic Compatibility-CMOS, TTL Length-0.385'' (9.78mm) Mounting Type-Through Hole Number of Outputs-1 Number of Pins-8 Operating Voltage Range-4.5 to 18 V Package Type-PDIP


Power MOSFET N-Channel 200V ID 30A TO-247 CASE HIGH Speed Switch Enhancement MOD, Pack of 2
By nte-electronics-inc
In Stock
$82.00
4.8 out of 5 stars with 21 reviews
Overview N-Channel Enhancement Mode MOSFET, 30 A, 190 W, -55 to 150 ?C, M3 Screw MountingDynamic dv/dt rating Repetitive avalanche rated Isolated central Mounting hole Fast switching Ease of paralleling Simple drive requirementsFeatures:Dimensions-15.9 x 5 x 20 mm Fall Time-62 ns (Typ.) Gate Charge, Total-140 nC Height-0.787'' (20mm) Length-0.625'' (15.875mm) Mounting Type-Through Hole Number of Elements per Chip-1 Number of Pins-3 Operating and Storage Temperature--55 to +150 ?C Package


Transistor; Bipolar; Si; NPN; Audio Amplifier; Switch; VCEO 40V; IC 800mA; PD 0.4W - Pack of 20
By NTE-ELECTRONICS-INC
In Stock
$100.24
4.3 out of 5 stars with 43 reviews
Dimensions : 5.84 Dia. x 5.33 H mm Frequency, Operating : 300 MHz Gain, DC Current, Maximum : 300 Gain, DC Current, Minimum : 35 mA Height : 0.21'' (5.33mm) Material : Si Mounting Type : Through Hole Number of Elements per Chip : 1 Number of Pins : 3 age Type : TO-18Configuration : Common Base. Current, Collector : 800 mA. Current, Continuous Collector : 800 mA. Device Dissipation : 1.2 W. Diameter : 5.84 mm.


Transistor PNP Silicon 200V IC 15A Audio Power Output COMPLEMENT to NTE2328, Pack of 5
By nte-electronics-inc
In Stock
$133.84
4.0 out of 5 stars with 58 reviews
Overview Silicon Complementary Transistor Audio Power Output, PNP Transistor TypeRecommended for 100 W high fidelity audio frequency amplifier output stageFeatures:Gain, DC Current, Minimum-55 Height-1.03'' (26.16mm) Length-0.809'' (20.57mm) Material-Si Mounting Type-Through Hole Number of Elements per Chip-1 Number of Pins-3 Package Type-TO-3PBL Polarity-PNP Power Dissipation-150 WConfiguration-Common Base. Current, Collector-15 A. Dimensions-20.57 x 5.2 x 26.16 mm. Frequency, Operating-25


MOSFET; N-Ch; VDSS 60V; RDS(ON) 40 Milliohms; ID 35A; TO-220; PD 125W; VGS +/-30V; VF 1, Pack of 5
By nte-electronics-inc
In Stock
$111.12
4.1 out of 5 stars with 17 reviews
Overview Enhancement Mode MOSFET, N-Channel, 40 Milliohms (Typ.)High speed switchFeatures:Height-0.61'' (15.49mm) Length-0.42'' (10.67mm) Mounting Type-Through Hole Number of Elements per Chip-1 Number of Pins-3 Operating and Storage Temperature--55 to +175 ?C Package Type-TO-220 Polarization-N-Channel Power Dissipation-125 W Product Header-N-Channel Enhancement Mode High Speed Switch MOSFETCapacitance, Input-1650 pF. 25 V. Channel Type-N. Configuration-Single. Current, Drain-35 A.


MOSFET; 25V; 45 A Power Block in PQFN 5x6 Package, Pack of 10
By infineon
In Stock
$127.44
4.1 out of 5 stars with 39 reviews
Overview IRs FastIRFET family offers benchmark performance with best in-class R Q figure of merit. The family features optimized packaging tailored to application requirements for size reduction. Ideal for high frequency applications requiring low switching loss or high light load efficiency. Excellent choices for DC-DC and POL cutting edge applications, such as base station power amplifiers, high performance DC-DC bricks, Platinum power supplies and high end battery driven


Transistor; Bipolar; Ge; PNP; IF Amplifier; Oscillator; RF; VCEO 16V; IC 10mA; PD 60mW, Pack of 5
By nte-electronics-inc
In Stock
$91.76
4.9 out of 5 stars with 25 reviews
Overview Germanium PNP Transistor RF-IF Amp, FM Mixer OSC, TO72The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a preamplifier mixer and oscillator up to 900 MHz.Features:Frequency, Operating-700 MHz Height-0.19'' (4.82mm) Material-Si Mounting Type-Through Hole Number of Elements per Chip-1 Number of Pins-4 Package Type-TO-72 Polarity-PNP Power Dissipation-60 mW Primary Type-GeAmplifier Type-RF-IF. Configuration-Common Base. Current, Collector-10 mA.



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